september 2006 / a page 1 semiconductor tak cheong ? 500 mw do-35 hermetically sealed glass zener voltage regulators absolute maximum ratings t a = 25c unless otherwise noted parameter value units power dissipation 500 mw storage temperature range -65 to +200 c operating junction temperature +200 c lead temperature (1/16? from case for 10 seconds) +230 c these ratings are limiting values above which the serviceability of the diode may be impaired. specification features: ? zener voltage range 2.0 to 39 volts ? do-35 package (jedec) ? through-hole device type mounting ? hermetically sealed glass ? compression bonded construction ? all external surfaces are corrosion resistant and leads are readily solderable ? cathode indicated by polarity band electrical characteristics (t a = 25c unless otherwise noted) vz@izt device type vz tolerance min nom max izt (ma) zzt@izt (ohms) max zzk@izk (ohms) max izk (ma) i r @ v r (ua) max v r (v) a 2.12 2.21 2.30 tcrd2v2 b 2.22 2.32 2.41 20 35 400 1 55 0.7 a 2.33 2.42 2.51 tcrd2v4 b 2.44 2.53 2.62 20 35 400 1 84 1 a 2.54 2.64 2.74 tcrd2v7 b 2.69 2.80 2.91 20 35 450 1 70 1 a 2.85 2.96 3.06 tcrd3v0 b 3.01 3.12 3.22 20 35 450 1 35 1 a 3.16 3.27 3.37 tcrd3v3 b 3.32 3.43 3.53 20 35 450 1 14 1 a 3.47 3.57 3.67 tcrd3v6 b 3.63 3.73 3.82 20 48 850 1 2.8 1 a 3.77 3.88 3.98 tcrd3v9 b 3.92 4.03 4.13 20 40 850 1 1.4 1 a 4.06 4.15 4.24 b 4.21 4.30 4.38 tcrd4v3 c 4.33 4.44 4.54 20 32 850 1 0.47 1 a 4.46 4.56 4.66 b 4.58 4.68 4.77 tcrd4v7 c 4.71 4.81 4.91 20 21 770 1 0.19 1 a 4.84 4.94 5.04 b 4.97 5.08 5.18 tcrd5v1 c 5.11 5.23 5.35 20 17 685 1 0.19 1.5 cathode anode electrical symbol tcrd2v2 through tcrd39v series l xx xt device marking diagram l : logo voltage code : tcrdxxx t : vz tolerance a, b, c or d axial lead do35
september 2006 / a page 2 semiconductor tak cheong ? electrical characteristics ( t a = 25c unless otherwise noted) v z @izt device type t tolerance min nom max izt (ma) zzt@izt (ohms) max zzk@izk (ohms) max izk (ma) i r @v r (ua) max v r (v) a 5.29 4.41 5.52 b 5.46 5.58 5.70 tcrd5v6 c 5.64 5.76 5.88 20 10.5 425 1 0.75 2.5 a 5.81 5.94 6.06 b 5.99 6.12 6.24 tcrd6v2 c 6.16 6.28 6.40 20 8.5 255 1 3.30 3.0 a 6.31 6.45 6.59 b 6.52 6.66 6.79 tcrd6v8 c 6.70 6.83 6.95 20 6.6 123 0.5 1.10 3.5 a 6.88 7.04 7.20 b 7.11 7.26 7.42 tcrd7v5 c 7.32 7.49 7.65 20 6.6 95 0.5 0.30 4.0 a 7.55 7.73 7.91 b 7.81 7.99 8.16 tcrd8v2 c 8.06 8.24 8.42 20 6.6 95 0.5 0.30 5.0 a 8.31 8.51 8.71 b 8.60 8.80 9.00 tcrd9v1 c 8.88 9.09 9.30 20 6.6 95 0.5 0.30 6.0 a 9.18 9.39 9.60 b 9.47 9.69 9.91 tcrd10v c 9.81 10.06 10.32 20 6.6 95 0.5 0.11 7.0 a 10.16 10.41 10.65 b 10.49 10.73 10.96 tcrd11v c 10.81 11.04 11.27 10 8.5 95 0.5 0.133 8.0 a 11.12 11.38 11.64 b 11.49 11.71 11.93 tcrd12v c 11.79 12.05 12.31 10 9.5 95 0.5 0.133 9.0 a 12.17 12.45 12.72 b 12.58 12.87 13.17 tcrd13v c 13.02 13.33 13.63 10 11.4 95 0.5 0.133 10 a 13.47 13.79 14.10 b 13.94 14.26 14.57 tcrd15v c 14.40 14.72 15.04 10 13.3 95 0.5 0.133 11 a 14.85 15.19 15.52 b 15.30 15.65 15.99 tcrd16v c 15.77 16.14 16.51 10 15.2 132 0.5 0.133 12 a 16.32 16.70 17.08 b 16.90 17.29 17.67 tcrd18v c 17.50 17.90 18.30 10 19.4 123 0.5 0.133 13 a 17.11 18.52 18.93 b 17.71 19.13 19.55 c 19.35 19.80 20.25 tcrd20v d 19.86 20.30 20.74 10 23.5 170 0.5 0.133 15 a 20.21 20.66 21.10 b 20.75 21.21 21.67 c 21.22 21.66 22.10 tcrd22v d 21.67 22.15 22.62 5 25.6 170 0.5 0.133 17 a 22.24 22.69 23.14 b 22.73 23.24 23.75 c 23.27 23.78 24.29 tcrd24v d 23.79 24.31 24.84 5 29.0 170 0.5 0.133 19
september 2006 / a page 3 semiconductor tak cheong ? electrical characteristics (t a = 25c unless otherwise noted) v z @izt device type t tolerance min nom max izt (ma) zzt@izt (ohms) max zzk@izk (ohms) max izk (ma) i r @v r (ua) max v r (v) a 24.24 24.89 25.54 b 24.95 25.62 26.28 c 25.60 26.29 26.97 tcrd27v d 26.28 26.97 27.67 5 38.0 210 0.5 0.133 21 a 26.98 27.69 28.41 b 27.67 28.41 29.15 c 28.34 29.09 29.84 tcrd30v d 29.00 29.77 30.54 5 46.0 210 0.5 0.133 23 a 29.66 30.45 31.25 b 30.29 31.10 31.91 c 30.88 31.70 32.52 tcrd33v d 31.46 32.30 33.15 5 55.0 210 0.5 0.133 25 a 32.19 32.96 33.74 b 32.83 33.63 34.42 c 33.46 34.27 35.07 tcrd36v d 31.07 34.89 35.71 5 63.0 210 0.5 0.133 27 a 34.74 35.57 36.41 b 35.41 36.26 37.12 c 36.05 36.92 37.79 tcrd39v d 36.69 37.58 38.46 5 72.0 210 0.5 0.133 30 vf (forward voltage) = 1.2 v maximum @ if = 200ma for all types notes: 1. the zener voltage subdivision (vz) is measured 40ms after diode is powered up. 2. the operating resistance (zzt and zzk) is measured by superimposing a minute alternation current in the regulated current (iz). 3. when ordering, please specify tolerance a, b, c or d. ordering information device package quantity tcrdxxxx bulk 10,000 tcrdxxxxtb tape and ammo 5,000 tcrdxxxxtr tape and reel 10,000 tcrdxxxx others (?contact tak cheong sales representatives)
september 2006 / a page 4 semiconductor tak cheong ? package outline package case outline do-35 do-35 millimeters inches dim min max min max a 0.46 0.55 0.018 0.022 b 3.05 5.08 0.120 0.200 c 25.40 38.10 1.000 1.500 d 1.53 2.28 0.060 0.090 notes: 1. all dimensions are within jedec standard. 2. do35 polarity denoted by cathode band.
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